ANODICALLY DOPED LAYERED BARRIER OXIDE FILMS: TUNGSTEN IN ALUMINA.
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In this paper results obtained as a result of using He**2** plus and Ar**4** plus MeV ion beams in a backscattering mode to probe the structure of anodic barrier alumina films grown in tungstate-containing borate buffer solutions are described. A periodic variation of tungsten in anodic films was observed. A possible mechanism for this possibly general phenomenon is proposed.