Effect of the surface on ion-beam damage build-up in ZnO Academic Article

abstract

• Lattice disorder in ZnO irradiated with heavy ions is anomalous, exhibiting an intermediate peak (IP) between the surface and bulk. Bombarding (0 0 0 1) ZnO single crystals with 500 keV Xe ions at two angles shows that the formation and propagation of the IP are independent of the displacement generation profile. The ZnO surface plays the dominant role in IP formation and propagation. The IP likely traps and annihilates mobile point defects, as evidenced by a step in Rutherford backscattering/channeling spectra. 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

authors

• Shao, Lin

published proceedings

• SCRIPTA MATERIALIA

author list (cited authors)

• Myers, M. T., Charnvanichborikarn, S., Shao, L., & Kucheyev, S. O.

citation count

• 11

complete list of authors

• Myers, MT||Charnvanichborikarn, S||Shao, L||Kucheyev, SO

publication date

• July 2012

publisher

• Elsevier  Publisher

published in

• Scripta Materialia  Journal

keywords

• Implantation
• Interface Defects
• Intermediate Defect Peak
• Semiconductor

Digital Object Identifier (DOI)

• 10.1016/j.scriptamat.2012.03.021

start page

• 65

end page

• 68

volume

• 67

issue

• 1

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.scriptamat.2012.03.021