Interface-mediated suppression of radiation damage in GaN Academic Article

abstract

• Interfaces are often sinks for radiation-generated defects and could either promote defect recombination or cause detrimental disorder accumulation. Here, we study (0 0 0 1) GaN irradiated with 500 keV Xe ions at room temperature. Results show that, when point defects are generated within 50 nm from the surface, they experience efficient recombination without any measurable increase in the rate of surface amorphization. Our findings provide clear experimental evidence of efficient suppression of radiation damage by an interface in a non-metallic material. 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

authors

• Shao, Lin

published proceedings

• SCRIPTA MATERIALIA

author list (cited authors)

• Charnvanichborikarn, S., Myers, M. T., Shao, L., & Kucheyev, S. O.

citation count

• 10

complete list of authors

• Charnvanichborikarn, S||Myers, MT||Shao, L||Kucheyev, SO

publication date

• July 2012

publisher

• Elsevier  Publisher

published in

• Scripta Materialia  Journal

keywords

• Ion-beam Process
• Rutherford Backscattering Spectrometry/channelling (rbs)
• Semiconductor Compounds
• Surface-interface Defects

Digital Object Identifier (DOI)

• 10.1016/j.scriptamat.2012.04.020

start page

• 205

end page

• 208

volume

• 67

issue

• 2

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.scriptamat.2012.04.020