Analysis of defect-assisted tunneling based on low frequency noise measurements of resonant tunnel diodes Academic Article uri icon


  • An experimental apparatus and procedure using noise measurement techniques have been developed in order to identify conduction mechanisms in RTDs due to defect assisted tunneling. The theory of noise measurements is discussed as the basis for the appropriate modelling of RTD noise data. The activation energies and capture cross-sections have been determined in a typical RTD for each of three distinct trap levels. A conjecture is made as to the physical location of the traps. This interpretation yields qualitative behavior consistent with the known bias and temperature dependence of the experimental results. © 1989.

published proceedings

  • Solid-State Electronics

author list (cited authors)

  • Weichold, M. H., Villareal, S. S., & Lux, R. A.

complete list of authors

  • Weichold, MH||Villareal, SS||Lux, RA

publication date

  • January 1, 1989 11:11 AM