Deep energy levels for defects at the AlAs (110) surface

abstract

• Energy levels deep within the band gap have been calculated for sp3-bonded substitutional impurities, for antisite defects, and for vacancies at the (110) surface of AlAs. The predictions are compared with Schottky barrier measurements, within the context of the Spicer-Bardeen model of Fermi-level pinning. An unoccupied surface antisite-defect level is predicted to lie within the band gap for Al on the As site; this level may be responsible for the Schottky barrier observed for n-type AlAs. 1982.

authors

• Allen, Roland

published proceedings

• Applications of Surface Science

author list (cited authors)

• Allen, R. E., & Dow, J. D.

citation count

• 11

complete list of authors

• Allen, Roland E||Dow, John D

publication date

• July 1982

publisher

• Elsevier  Publisher

published in

• Applications of Surface Science  Journal

Digital Object Identifier (DOI)

• 10.1016/0378-5963(82)90083-6

start page

• 362

end page

• 367

volume

• 11

issue

• C

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2F0378-5963%2882%2990083-6