Deep energy levels for defects at the AlAs (110) surface
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Energy levels deep within the band gap have been calculated for sp3-bonded substitutional impurities, for antisite defects, and for vacancies at the (110) surface of AlAs. The predictions are compared with Schottky barrier measurements, within the context of the Spicer-Bardeen model of Fermi-level pinning. An unoccupied surface antisite-defect level is predicted to lie within the band gap for Al on the As site; this level may be responsible for the Schottky barrier observed for n-type AlAs. © 1982.
author list (cited authors)
Allen, R. E., & Dow, J. D.