publication venue for
- INTERFACIAL DEEP LEVELS RESPONSIBLE FOR SCHOTTKY-BARRIER FORMATION AT SEMICONDUCTOR METAL CONTACTS. 22-3:937-947. 1985
- Interfacial deep levels responsible for schottky barrier formation at semiconductor/metal contacts. 22-23:937-947. 1985
- Deep energy levels for defects at the AlAs (110) surface. 11:362-367. 1982