On the determination of carbon and oxygen impurities in silicon by3He activation analysis Academic Article uri icon

abstract

  • Carbon and oxygen impurities in silicon have been determined by 7.00 MeV3He activation analysis. The detection limits obtained for interference-free conditions are 0.1 ppb (wt) for carbon and 1.0 ppb (wt) for oxygen in silicon. 1984 Akadmiai Kiad.

published proceedings

  • Journal of Radioanalytical and Nuclear Chemistry Articles

author list (cited authors)

  • Sanni, A. Q., Roch, N. G., Dowell, H. J., Schweikert, E. A., & Ramsey, T. H.

citation count

  • 10

complete list of authors

  • Sanni, AQ||Roché, NG||Dowell, HJ||Schweikert, EA||Ramsey, TH

publication date

  • January 1984