On the determination of carbon and oxygen impurities in silicon by3He activation analysis
- Additional Document Info
- View All
Carbon and oxygen impurities in silicon have been determined by 7.00 MeV3He activation analysis. The detection limits obtained for interference-free conditions are 0.1 ppb (wt) for carbon and 1.0 ppb (wt) for oxygen in silicon. 1984 Akadmiai Kiad.
Journal of Radioanalytical and Nuclear Chemistry Articles
author list (cited authors)
Sanni, A. Q., Roch, N. G., Dowell, H. J., Schweikert, E. A., & Ramsey, T. H.
complete list of authors
Sanni, AQ||Roché, NG||Dowell, HJ||Schweikert, EA||Ramsey, TH