ON THE DETERMINATION OF CARBON AND OXYGEN IMPURITIES IN SILICON BY HE-3 ACTIVATION-ANALYSIS Academic Article

abstract

• Carbon and oxygen impurities in silicon have been determined by 7.00 MeV3He activation analysis. The detection limits obtained for interference-free conditions are 0.1 ppb (wt) for carbon and 1.0 ppb (wt) for oxygen in silicon. 1984 Akadmiai Kiad.

authors

• Schweikert, Emile

published proceedings

• JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY

author list (cited authors)

• SANNI, A. O., ROCHE, N. G., DOWELL, H. J., SCHWEIKERT, E. A., & RAMSEY, T. H.

citation count

• 10

complete list of authors

• SANNI, AO||ROCHE, NG||DOWELL, HJ||SCHWEIKERT, EA||RAMSEY, TH

publication date

• January 1984

publisher

• Springer Nature  Publisher

published in

• Journal of Radioanalytical and Nuclear Chemistry: an�International Journal dealing with all Aspects�and Applications of Nuclear Chemistry  Journal

keywords

• 34 Chemical Sciences
• 3401 Analytical Chemistry
• 3402 Inorganic Chemistry

Digital Object Identifier (DOI)

• 10.1007/BF02132927

start page

• 125

end page

• 129

volume

• 81

issue

• 1

URL

• http%3A%2F%2Fdx.doi.org%2F10.1007%2Fbf02132927