The (3)He activation method for oxygen determination was applied to chalcogenide materials such as Ge(28)Sb(12)Se(60) and Ge(33)As(12)Se(55). Attention was focused on the optimization of the (3)He bombardment energy for non-destructive oxygen determination and the validity of the post-irradiation chemical etch used for removing surface oxygen contamination. The procedure developed was tested on a series of chalcogenide glasses. The detection limit for this non-destructive technique using ~6-MeV (3)He is estimated at ~1 ppm of oxygen.
