I am involved in basic and applied research that focuses on engineered electronic materials that can easily be integrated into the existing silicon technology for a wide range of applications.
Nepal, N., Katzer, D. S., Downey, B. P., Wheeler, V. D., Nyakiti, L. O., Storm, D. F., ... Meyer, D. J.
(2020).Heteroepitaxial growth of beta-Ga2O3 films on SiC via molecular beam epitaxy. Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.
38(6), 063406-063406.
Currie, M., Wheeler, V. D., Downey, B., Nepal, N., Qadri, S. B., Wollmershauser, J. A., Avila, J., & Nyakiti, L.
(2019).Asymmetric hysteresis in vanadium dioxide thin films. Optical Materials Express.
9(9), 3717-3717.
Cai, X., Sushkov, A. B., Jadidi, M. M., Nyakiti, L. O., Myers-Ward, R. L., Gaskill, D. K., ... Drew, H. D.
(2015).Plasmon-Enhanced Terahertz Photodetection in Graphene. Nano Letters: a journal dedicated to nanoscience and nanotechnology.
15(7), 4295-4302.
Nyakiti, L. O., Myers-Ward, R. L., Wheeler, V. D., Imhoff, E. A., Bezares, F. J., Chun, H., ... Gaskill, D. K.
(2012).Bilayer graphene grown on 4H-SiC (0001) step-free mesas. Nano Letters: a journal dedicated to nanoscience and nanotechnology.
12(4), 1749-1756.
Aurongzeb, D., Song, D. Y., Kipshidze, G., Yavich, B., Nyakiti, L., Lee, R., ... Holtz, M.
(2008).Growth of GaN Nanowires on Epitaxial GaN. Journal of Electronic Materials.
37(8), 1076-1081.
Gaskill, D. K., & Nyakiti, L. O.
(2012).Formation of Epitaxial Graphene. GRAPHENE NANOELECTRONICS: FROM MATERIALS TO CIRCUITS.
(pp. 137-165).
Springer Nature.
Imhoff, E. A., Hobart, K. D., Kub, F. J., Ancona, M. G., Myers-Ward, R. L., Garces, N. Y., ... Gaskill, D. K.
(2012).Positive Temperature Coefficient SiC PiN Diodes. Materials Science Forum.
981-984.