Durrani, Yamin Qaisar (2005-08). Analysis of silicon carbide based semiconductor power devices and their application in power factor correction. Master's Thesis. Thesis uri icon

abstract

  • Recent technological advances have allowed silicon (Si) semiconductor technology to
    approach the theoretical limits of the Si material; however, power device requirements for
    many applications are at a stage that the present Si-based power devices cannot handle.
    The requirements include higher blocking voltages, switching frequencies, efficiency, and
    reliability. Material technologies superior to Si are needed for future power device
    developments. Silicon Carbide (SiC) based semiconductor devices offer one such
    alternative. SiC based power devices exhibit superior properties such as very low
    switching losses, fast switching behavior, improved reliability and high temperature
    operation capabilities. Power factor correction stage of power supplies is identified as an
    area where application of these devices would prove advantageous. In this thesis a high
    performance, high efficiency, SiC based power factor correction stage is discussed. The
    proposed topology takes advantage of the superior properties of SiC semiconductor based
    devices and the reduced number of devices that the dual boost power factor correction
    topology requires to achieve high efficiency, small size and better performance at high
    temperature. In addition to this analysis of SiC based power devices is carried out to study
    their characteristics and performance.

publication date

  • August 2005