Defect and pinning effect of Sn-doping on (La1xSrx)2Cu1xSnxO4 superconductors Academic Article uri icon

abstract

  • The effect of Sn-doping on (La1-xSrx)2Cu1-xSnxO 4 (x=0.075, 0.090 and 0.110) has been studied. Lattice parameters monotonically decrease with Sn dopant increasing. Sn atoms dominantly occupy Cu sites and form Sn-O clusters as point-like defects. Flux pinning properties of ceramic samples of (La1-xSrx)2Cu1-xSnxO 4 have been investigated by magnetic measurements from 6 to 30 K up to 5 T. The current carrying scale-length analysis has been determined from the reverse leg of the magnetization hysteresis loops and compared to the actual dimensions of the sample. Magnetization hysteresis loops of the more richly Sn-doped sample exhibit stronger pinning behavior, especially in the higher temperature range. The intra-granular critical current Jc in the rich Sn-doping sample has a significant increase. We discuss the experimental results within a pinning model of point-like defects. From our data we infer that the Sn-O cluster near Cu-O layers provides an effective pinning center. 2002 Published by Elsevier Science B.V.

published proceedings

  • Physica C: Superconductivity

author list (cited authors)

  • Li, Y., Cao, G. H., Che, G. C., Zhao, Z. X., Ross, J. H., & Baggio-Saitovitch, E. M

publication date

  • January 1, 2002 11:11 AM