A Stem Study Of A Germanium Island-Silicon Interface uri icon

abstract

  • Abstract Growth of germanium or silicon-germanium on silicon 100 surfaces produces pyramid shaped islands after several monolayers of coverage. With further deposition, these islands will continue to grow until they reach a critical volume where a transition to a dome shape occurs. The critical surface coverage for island formation and the critical volume for the pyramid to dome transition depend upon the silicon to germanium ratio or degree of mismatch between the deposited material and the silicon substrate. Strain plays a dominant role in the shape transitions. Annealing studies have shown that the pyramid to dome transition.is reversible and is likely due to strain reduction related to interdiffusion. Annealing results in island growth, a decrease in the number of islands, and interdiffusion of the silicon and germanium. The interdiffusion relieves the strain and shifts the critical volume to a value exceeding the current volume of the dome shaped island thereby driving the transition back to pyramidal shape.

published proceedings

  • Microscopy and Microanalysis

author list (cited authors)

  • Vanfleet, R. R., Basile, D. P., Kamins, T. I., Silcox, J., & Williams, R. S.

complete list of authors

  • Vanfleet, RR||Basile, DP||Kamins, TI||Silcox, J||Williams, R Stanley

publication date

  • August 1999