Formation mechanism of wide stacking faults in nanocrystalline Al Academic Article

abstract

• A full dislocation often dissociates into two partial dislocations enclosing a stacking fault (SF) ribbon. The SF width significantly affects the mechanical behavior of metals. Al has very high stacking fault energy and, consequently, very narrow SF width in its coarse-grained state. We have found that some SFs in nanocrystalline Al are surprisingly 1.46.8 nm wide, which is 1.511 times higher than the reported experimental value in single crystal Al. Our analytical model shows that such wide SFs are formed due to the small grain size and possibly also to the interaction of SF ribbons with high density of dislocations.

authors

• Lavernia Borrego, Enrique

published proceedings

• Applied Physics Letters

author list (cited authors)

• Liao, X. Z., Srinivasan, S. G., Zhao, Y. H., Baskes, M. I., Zhu, Y. T., Zhou, F., Lavernia, E. J., & Xu, H. F.

complete list of authors

• Liao, XZ||Srinivasan, SG||Zhao, YH||Baskes, MI||Zhu, YT||Zhou, F||Lavernia, EJ||Xu, HF

publication date

• May 2004

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1063/1.1734689

start page

• 3564

end page

• 3566

volume

• 84

issue

• 18

URL

• http://dx.doi.org/10.1063/1.1734689