Off-axis electron holography of unbiased and reverse-biased focused ion beam milled Si p-n junctions. Conference Paper

abstract

• Off-axis electron holography is used to measure electrostatic potential profiles across a silicon p-n junction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled sample in situ in the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.

authors

• Abbott, Louise
• Choe, Yoonsuck
• Keyser, John

published proceedings

• Microsc Microanal

author list (cited authors)

• Twitchett, A. C., Dunin-Borkowski, R. E., Hallifax, R. J., Broom, R. F., & Midgley, P. A.

citation count

• 32

complete list of authors

• Twitchett, Alison C||Dunin-Borkowski, Rafal E||Hallifax, Robert J||Broom, Ronald F||Midgley, Paul A

publication date

• January 2014

publisher

• Oxford University Press (OUP)  Publisher

published in

• Microscopy and Microanalysis  Journal

keywords

• 0912 Materials Engineering

PubMed Central ID

• 15683573

Digital Object Identifier (DOI)

• 10.1017/S1431927605050087

start page

• 66

end page

• 78

volume

• 11

issue

• 1