Kinetics of OH chemiluminescence in the presence of silicon Academic Article uri icon


  • Ultraviolet emission from the OH(A-X) transition near 307 nm has been measured in a shock-tube for T = 1050-1400 K and P 1.2 atm. Experimental mixtures of H2/SiH4/O2/Ar and kinetics calculations were used to identify the elementary reaction forming electronically excited OH (OH*) in a Si-containing environment and directly measure its absolute rate coefficient. The primary Si-containing reaction found to form OH* is (R0)SiH + O2 = OH* + SiOwith a rate expression ofk0 = 1.5 107 exp (+ 16.4 kcal/RT) 2.3 1010 cm 3 mol -1 s -1This work provides insights into the mechanisms of combustion processes involving silicon. 2006 Elsevier B.V. All rights reserved.

published proceedings


author list (cited authors)

  • Hall, J. M., Reehal, S., & Petersen, E. L.

citation count

  • 7

complete list of authors

  • Hall, Joel M||Reehal, Shatra||Petersen, Eric L

publication date

  • July 2006