The Growth Dynamics Of Solid 4He Academic Article uri icon


  • ABSTRACTThe interfacial properties of the solid-liquid interface of 4He have been studied at temperatures below 0.5 K using crystallization waves. From the dispersion and damping of the crystallization waves, one can determine the interfacial stiffness, , and the interfacial growth resistance, (Km)1, respectively. Our measured values for are consistently smaller than previously published values. At the lowest temperatures, the measured (Km)1 increases as T4 which is consistent with the prediction that the growth velocity is limited by the scattering of ballistic phonons by the moving interface. We also observe that above 0.25 K the phonon damping is dramatically reduced.

published proceedings

  • MRS Advances

author list (cited authors)

  • Wang, C., & Agnolet, G.

citation count

  • 0

publication date

  • 1991