Displacements of Sb atoms in supersaturated Sb-doped Si layer formed by molecular beam epitaxy growth Academic Article

abstract

• Rutherford backscattering channeling measurements with angular scans have been carried out on 100 Sb-doped Si superlattice structures formed by molecular beam epitaxy growth. Three different crystallographic axes 100, 111, and 110 have been explored. We have observed Sb displacements from their substitutional sites with displacement amplitudes of 0.22 in as-grown samples. The displacements increase with increasing post-growth annealing temperatures, associated with formation of nanometer size Sb precipitates.

authors

• Shao, Lin

published proceedings

• JOURNAL OF APPLIED PHYSICS

author list (cited authors)

• Zhu, L., Thompson, P. E., Zhang, X., Hollander, M., & Shao, L.

citation count

• 4

complete list of authors

• Zhu, Lei||Thompson, Phillip E||Zhang, Xinghang||Hollander, Mark||Shao, Lin

publication date

• April 2007

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4018 Nanotechnology
• 51 Physical Sciences
• Rare Diseases

Digital Object Identifier (DOI)

• 10.1063/1.2717604

start page

• 086110

volume

• 101

issue

• 8

URL

• http://dx.doi.org/10.1063/1.2717604