Displacements of Sb atoms in supersaturated Sb-doped Si layer formed by molecular beam epitaxy growth
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Rutherford backscattering channeling measurements with angular scans have been carried out on 〈 100 〉 Sb-doped Si superlattice structures formed by molecular beam epitaxy growth. Three different crystallographic axes 〈 100 〉, 〈 111 〉, and 〈 110 〉 have been explored. We have observed Sb displacements from their substitutional sites with displacement amplitudes of 0.22 Å in as-grown samples. The displacements increase with increasing post-growth annealing temperatures, associated with formation of nanometer size Sb precipitates. © 2007 American Institute of Physics.
author list (cited authors)
Zhu, L., Thompson, P. E., Zhang, X., Hollander, M., & Shao, L.