Elasto-Viscoplastic Dispersive Waves in Silicon Wafers
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This paper provides the required knowledge base for establishing Laser Induced Stress Wave Thermometry (LISWT) as a viable alternative to current infrared technologies for temperature measurement up to 1000°C with ± 1°C resolution. A stress wave propagation model having a complex, temperature-dependent elasto-viscoplastic constitutive law is developed. Investigated results show that wave group velocity is a nonlinear function of temperature. Nonlinearity becomes more prominent at high temperatures and low frequencies. As such, for LISWT to achieve better thermal resolution at high temperatures, low frequency components of the induced stress wave should be exploited. The results also show that the influence of temperature on attenuation is relatively small. It is not recommended to use attenuation for resolving temperature variation as small as several degrees Celsius. In addition to temperature, geometry also is found to have an impact on wave dispersion and attenuation. The influence of thickness on wave velocity is significant, thus suggesting that for LISWT to achieve high temperature resolution, wafer thickness must be accurately calibrated in order to eliminate all possible errors introduced by thickness variation. Copyright © 2007 by ASME.
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