Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part II: Near-Field Response Academic Article

abstract

• The multi-time scale ultrafast laser model of axisymmetric geometry presented in Part I is validated with computed carrier densities and melting thresholds that agree well with published physical data. Transport phenomena initiated by femtoseconds heating including the spatial and temporal evolutions of electron and lattice temperatures and electron-hole carrier density are highly localized in both time and space. The temporal and spatial scales associated with the generation of thermal stress waves are significantly larger at tenths of nanoseconds and microns, respectively. Ultrashort laser pulse induced transverse stress waves are highly dispersive and characteristically of broadband, low amplitude, and extremely high frequency and power density contents. Near-field responses that precede the development of a full-blown plate wave are also localized in space with a power density magnitude on the order of 1013Watts per cubic meters in volume.

authors

• Suh, C. Steve

published proceedings

• JOURNAL OF THERMAL STRESSES

author list (cited authors)

• Qi, X., & Suh, C. S.

citation count

• 10

complete list of authors

• Qi, Xuele||Suh, C Steve

publication date

• January 2009

publisher

• Taylor & Francis  Publisher

published in

• Journal of Thermal Stresses  Journal

keywords

• Axisymmetric Model
• Multi-time Scale
• Near-field Response
• Silicon Wafer
• Staggered Finite Difference Scheme
• Ultrafast Laser Pulse

Digital Object Identifier (DOI)

• 10.1080/01495730802637399

start page

• 494

end page

• 511

volume

• 32

issue

• 5

URL

• http://dx.doi.org/10.1080/01495730802637399