The generation of nano-patterns on a pure silicon wafer in air and argon with sub-diffraction limit nanosecond laser pulses Academic Article uri icon

abstract

  • Intense nanosecond laser pulses were delivered to sub-diffraction limit spots on pure Si wafers with a near field scanning optical microscope (NSOM) for possible nanoscale direct patterning. Compared with the previous results obtained with a femtosecond laser, no evidence of nanoscale laser ablation on Si targets was observed even under the maximum allowable laser energy (i.e. before the damage of NSOM probes). The formation of nano-patterns on pure Si wafers with nanosecond laser pulses, which were in the form of protrusions, can be explained as resulting from the melting and recrystallization along with the oxidation of pure Si targets during and after the laser pulses. Note that these nano-protrusions were primarily composed of SiO2 and nano-crystallized Si (nc-Si). © 2010 IOP Publishing Ltd.

author list (cited authors)

  • Soni, A., Sundaram, V. M., & Wen, S.

citation count

  • 12

publication date

  • March 2010