rf current dependence of the 8.9‐GHz impedance of tantalum point‐contact Josephson junctions
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The complex rf impedance of tantalum point-contact Josephson junctions at 8.9 GHz has been measured as a function of the dc bias current for several values of rf current amplitude. The experimental results agree qualitatively with the predictions of the resistively-shunted-junction model, but discrepancies between the experimental results and the theory suggest that this model does not adequately predict all of the impedance properties of these junctions.
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