Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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Thanh, T. T., Jang, K., Velumani, S., Vinh, A. D., & Yi, J.
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Thanh, Thuy Trinh||Jang, Kyungsoo||Velumani, S||Vinh, Ai Dao||Yi, Junsin
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High Mobility Tfts
High-conductivity Igzo-tft
Schottky Barrier Modification
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http://dx.doi.org/10.1016/j.mssp.2015.03.051