Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

authors

• Subramaniam, Velumani

published proceedings

• JOURNAL OF SEMICONDUCTORS

author list (cited authors)

• Liang, Y., Jang, K., Velumani, S., Nguyen, C., & Yi, J.

citation count

• 9

complete list of authors

• Liang, Yongye||Jang, Kyungsoo||Velumani, S||Nguyen, Cam Phu Thi||Yi, Junsin

publication date

• January 2015

publisher

• IOP Publishing  Publisher

published in

• n1674-4926ISSN  Journal

keywords

• A-itzo Tfts
• Electrical Properties
• Electrical Stability
• Interface Trap Density
• Low Resistivity

Digital Object Identifier (DOI)

• 10.1088/1674-4926/36/2/024007

start page

• 024007

end page

• 024007

volume

• 36

issue

• 2

URL

• http://dx.doi.org/10.1088/1674-4926/36/2/024007