Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer Academic Article uri icon

abstract

  • Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4cm2/Vs) and threshold voltage (0.43V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Raja, J., Jang, K., Hussain, S. Q., Balaji, N., Chatterjee, S., Velumani, S., & Yi, J.

citation count

  • 8

complete list of authors

  • Raja, Jayapal||Jang, Kyungsoo||Hussain, Shahzada Qamar||Balaji, Nagarajan||Chatterjee, Somenath||Velumani, S||Yi, Junsin

publication date

  • January 2015