A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier Academic Article uri icon

abstract

  • This paper presents a 2332 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 μm BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 μm BiCMOS technology and occupies an area of 0.25 mm2. It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.56.3 dB, linearity higher than -6.4 dBm with a power consumption of 13 mW from a 1.5 V supply. © 2006 IEEE.

author list (cited authors)

  • El-Nozahi, M., Sánchez-Sinencio, E., & Entesari, K.

citation count

  • 42

publication date

  • February 2010