A Millimeter-Wave (23-32 GHz) Wideband BiCMOS Low-Noise Amplifier Academic Article

abstract

• This paper presents a 2332 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 m BiCMOS technology and occupies an area of 0.25 mm2. It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.56.3 dB, linearity higher than -6.4 dBm with a power consumption of 13 mW from a 1.5 V supply. 2006 IEEE.

authors

• Entesari, Kamran

published proceedings

• IEEE JOURNAL OF SOLID-STATE CIRCUITS

author list (cited authors)

• El-Nozahi, M., Sanchez-Sinencio, E., & Entesari, K.

citation count

• 46

complete list of authors

• El-Nozahi, Mohamed||Sanchez-Sinencio, Edgar||Entesari, Kamran

publication date

• February 2010

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Journal of Solid-State Circuits  Journal

keywords

• Bicmos
• Coupled-resonators
• Low-noise Amplifier
• Millimeter-wave
• Wideband

Digital Object Identifier (DOI)

• 10.1109/JSSC.2009.2038126

start page

• 289

end page

• 299

volume

• 45

issue

• 2

URL

• http://dx.doi.org/10.1109/jssc.2009.2038126