Noise Modeling and Capacity Analysis for NAND Flash Memories Conference Paper uri icon

abstract

  • Flash memories have become a significant storage technology. However, they have various types of error mechanisms, which are drastically different from traditional communication channels. Understanding the error models is necessary for developing better coding schemes in the complex practical settings. This paper endeavors to survey the noise and disturbs in NAND flash memories, and construct channel models for them. The capacity of flash memory under these models is analyzed, particularly regarding capacity degradation with flash operations, the trade-off of sub-thresholds for soft cell-level information, and the importance of dynamic thresholds. 2014 IEEE.

name of conference

  • 2014 IEEE International Symposium on Information Theory

published proceedings

  • 2014 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY (ISIT)

author list (cited authors)

  • Li, Q., Jiang, A. A., & Haratsch, E. F.

citation count

  • 27

complete list of authors

  • Li, Qing||Jiang, Anxiao Andrew||Haratsch, Erich F

publication date

  • June 2014