Rank Modulation for Flash Memories Conference Paper uri icon

abstract

  • We explore a novel data representation scheme for multi-level flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top" operation which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. We also investigate optimal rewriting schemes for translating arbitrary input alphabet into n-cell states which minimize the number of programming operations. 2008 IEEE.

name of conference

  • 2008 IEEE International Symposium on Information Theory

published proceedings

  • 2008 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY PROCEEDINGS, VOLS 1-6

author list (cited authors)

  • Jiang, A. A., Mateescu, R., Schwartz, M., & Bruck, J.

citation count

  • 39

complete list of authors

  • Jiang, Anxiao Andrew||Mateescu, Robert||Schwartz, Moshe||Bruck, Jehoshua

publication date

  • July 2008