Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element Academic Article uri icon

abstract

  • A wellposed physicsbased compact model for a threeterminal siliconoxidenitrideoxidesilicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the threeterminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the sourcedrain conductance of a SONOS device after applying writing pulses ranging from 12V to +11V, with an accuracy higher than 90%.

published proceedings

  • ADVANCED INTELLIGENT SYSTEMS

author list (cited authors)

  • Yi, S., Talin, A. A., Marinella, M. J., & Williams, R. S.

citation count

  • 2

complete list of authors

  • Yi, Su-in||Talin, A Alec||Marinella, Matthew J||Williams, Richard Stanley

publication date

  • September 2022

publisher