Precise control of carbon nanotube synthesis of a single chirality
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Copyright 2007 by ASME. This work demonstrates precise control over the synthesis conditions and location during CNT formation, such that single chirality tubes are obtainable. This technique obviates two significant hurdles that prevent the exploitation of CNTs in micro- and nano-devices. Microelectronic applications require precise location and chirality of synthesized CNTs. Conventional CVD synthesis techniques typically yield mixtures of CNTs (semi-conducting and metallic types) that grow at random locations. Dip Pen Nanolithography (DPN) techniques were used to deposit the catalysts at precisely defined locations and to pattern the catalysts on a substrate with specific sizes as well as to control the catalyst composition. After deposition of catalysts, a low temperature Chemical Vapor Deposition (CVD) process was used to synthesize CNT. Various known catalysts were deposited. Characterization studies before and after CVD synthesis of CNT showed that the CNT were of a single chirality as well as uniform diameter (with a very narrow range of variability). The results indicate that the chirality of the synthesized CNT can be controlled by changing the synthesis conditions (e.g., size of the catalyst patterns, composition of the catalysts, temperature of CVD, gas flow rates, etc.).
