Joint Rewriting and Error Correction in Write-Once Memories Conference Paper

abstract

• Both rewriting and error correction are important technologies for non-volatile memories, especially flash memories. However, coding schemes that combine them have been limited. This paper presents a new coding scheme that combines rewriting and error correction for the write-once memory model. Its construction is based on polar codes, and it supports any number of rewrites and corrects a substantial number of errors. The code is analyzed for the binary symmetric channel, and experimental results verify its performance. The results can be extended to multi-level cells and more general noise models. 2013 IEEE.

name of conference

• 2013 IEEE International Symposium on Information Theory

authors

• Jiang, Anxiao (Andrew)

published proceedings

• 2013 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY PROCEEDINGS (ISIT)

author list (cited authors)

• Jiang, A. A., Li, Y., Gad, E. E., Langberg, M., & Bruck, J.

citation count

• 15

complete list of authors

• Jiang, Anxiao Andrew||Li, Yue||Gad, Eyal En||Langberg, Michael||Bruck, Jehoshua

publication date

• January 2013

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE International Symposium on Information Theory - Proceedings  Journal

Digital Object Identifier (DOI)

• 10.1109/isit.2013.6620390

International Standard Book Number (ISBN) 13

• 9781479904464

start page

• 1067

end page

• +

URL

• http://dx.doi.org/10.1109/isit.2013.6620390