NbO₂-Mott Memristor: A Circuit-Theoretic Investigation Academic Article

authors

• Williams, R. Stanley

published proceedings

• IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

author list (cited authors)

• Messaris, I., Brown, T. D., Demirkol, A. S., Ascoli, A., Al Chawa, M. M., Williams, R. S., Tetzlaff, R., & Chua, L. O.

citation count

• 20

complete list of authors

• Messaris, Ioannis||Brown, Timothy D||Demirkol, Ahmet S||Ascoli, Alon||Al Chawa, M Moner||Williams, R Stanley||Tetzlaff, Ronald||Chua, Leon O

publication date

• December 2021

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Circuits and Systems I: Regular Papers  Journal

keywords

• Circuit Theory
• Device Model
• Edge Of Chaos
• Local Activity
• Nbo2-mott Memristor

Digital Object Identifier (DOI)

• 10.1109/TCSI.2021.3126657

start page

• 4979

end page

• 4992

volume

• 68

issue

• 12

URL

• http://dx.doi.org/10.1109/tcsi.2021.3126657