Probing Relaxation Dynamics and Stepped Domain Switching in Boron-Alloyed VO2 Academic Article uri icon


  • AbstractThe characteristic metalinsulator phase transition (MIT) in vanadium dioxide results in nonlinear electrical transport behavior, allowing VO2 devices to imitate the complex functions of neurological behavior. Chemical doping is an established method for varying the properties of the MIT, and interstitial dopant boron has been shown to generate a unique dynamic relaxation effect in individual BVO2 particles. This paper describes the first demonstration of an electrically stimulated BVO2 protodevice which manifests a timedependent critical transformation temperature and switching voltage derived from the coupling of dopant diffusion dynamics and the metalinsulator transition of VO2. During quasisteady currentdriven transitions, the electrical responses of BVO2 protodevices show a stepbystep progression through the phase transformation, evidencing domain transformations within individual particles. The dynamic relaxation effect is shown to increase the critical switching voltage by up to 41% (Vcrit= 0.13V) and also to increase the resistivity of the M1 phase of BVO2 by 14%, imbuing a memristive response derived from intrinsic material properties. These observations demonstrate the dynamic relaxation effect in BVO2 protodevices whose electrical transport responses can be adjusted by electronic phase transitions triggered by temperature but also by time as a result of intrinsic dynamics of interstitial dopants.

published proceedings


author list (cited authors)

  • Bradicich, A., Clarke, H., Braham, E. J., Yano, A., Sellers, D., Banerjee, S., & Shamberger, P. J.

citation count

  • 6

complete list of authors

  • Bradicich, Adelaide||Clarke, Heidi||Braham, Erick J||Yano, Aliya||Sellers, Diane||Banerjee, Sarbajit||Shamberger, Patrick J

publication date

  • March 2022