Application of High Energy Ion Beam on the Control of Boron Diffusion Academic Article

abstract

• ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

authors

• Shao, Lin

published proceedings

• MRS Advances

author list (cited authors)

• Chu, W., Shao, L., & Liu, J.

citation count

• 0

complete list of authors

• Chu, Wei-Kan||Shao, Lin||Liu, Jiarui

publication date

• 2003

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 7 Affordable And Clean Energy

Digital Object Identifier (DOI)

• 10.1557/proc-792-r7.1

start page

• r7.1

volume

• 792

URL

• http://dx.doi.org/10.1557/proc-792-r7.1

user-defined tag

• 7 Affordable and Clean Energy