Mid-infrared frequency doubling using strip-loaded silicon nitride on epitaxial barium titanate thin film waveguides. Academic Article

abstract

• Broadband mid-infrared (mid-IR) frequency doubling was demonstrated using nonlinear barium titanate (BTO) thin films. The device has a strip-loaded waveguide structure consisting of top silicon nitride (SiN) strips and an underneath BTO guiding layer. The epitaxial BTO was deposited on a strontium titanate (STO) substrate by pulsed-laser deposition. Through a SiN grating coupler, the pumping mid-IR light at wavelength =3.30-3.45m was coupled into the nonlinear BTO layer, where the spectrum of the near-infrared (NIR) second-harmonic generation was characterized. The developed BTO waveguides provide a platform for mid-IR nonlinear integrated photonics and on-chip quantum optics.

authors

• Lin, Paotai

published proceedings

• Opt Lett

author list (cited authors)

• Zhou, J., Liu, M., Lu, M., & Lin, P. T.

citation count

• 0

complete list of authors

• Zhou, Junchao||Liu, Mingzhao||Lu, Ming||Lin, Pao Tai

publication date

• December 2020

publisher

• Optica Publishing Group  Publisher

published in

• Optics Letters  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1364/OL.403760

start page

• 6358

end page

• 6361

volume

• 45

issue

• 23

URL

• http://dx.doi.org/10.1364/ol.403760