Initial phase formation and dissociation in the thin-film Ni/Al system Academic Article

abstract

• We have investigated the interactions of Al/Ni, Al/NiAl/Ni, Al/Ni3Al, and NiAl3/Ni thin films between 300 and 425C. The films were prepared by sequential evaporation and coevaporation, then vacuum annealed and analyzed by Rutherford backscattering and x-ray diffraction. The reaction always started at the interface in contact with the most Al-rich film and resulted in formation and growth of NiAl3, unless that was the most Al-rich layer. Subsequently the reaction proceeded to Ni2Al3. We conclude that the kinetics rather than the thermodynamics is responsible for determining the growth of these phases.

authors

• Nastasi, Michael

published proceedings

• Journal of Applied Physics

altmetric score

• 3

author list (cited authors)

• Colgan, E. G., Nastasi, M., & Mayer, J. W.

citation count

• 105

publication date

• December 1985

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1063/1.335542

start page

• 4125

end page

• 4129

volume

• 58

issue

• 11

URL

• http://dx.doi.org/10.1063/1.335542