Epitaxial growth of Fe-doped sapphire thin films from amorphous Al oxide layers deposited on sapphire substrates Academic Article uri icon

abstract

  • Thin films of amorphous Al2O3, about 280 nm thick, with Fe-cation concentrations of 04 at.% were deposited onto alpha-alumina [0001] substrates. Epitaxial regrowth of the thin films was found to occur during a postannealing process at temperatures of 950 and 1400C. The regrowth quality was determined by Rutherford backscattering spectrometry and ion channeling measurements. Perfect regrowth was found in the undoped samples after annealing at 1400C with a minimum backscattering yield of 2% in the Al sublattice. Furthermore, ion channeling angular scans revealed that Fe dopants occupied the substitutional sites of Al sublattice upon thermal anneal. This simple method of incorporating dopants into single-crystal alumina has potential in the fabrications of thin-film planar optical waveguides.

published proceedings

  • Applied Physics Letters

author list (cited authors)

  • Yu, N., & Nastasi, M.

citation count

  • 16

complete list of authors

  • Yu, Ning||Nastasi, Michael

publication date

  • July 1994