Epitaxial regrowth of ruby on sapphire for an integrated thin film stress sensor Academic Article

abstract

• The formation of thin film ruby by the epitaxial growth of Cr-doped amorphous alumina on sapphire is described. The incorporation of Cr onto the Al cation sites has been found by ion channeling measurements. It is also confirmed by the observation of the R1 and R2 luminescence lines characteristic of ruby. The frequency of the R lines shift linearly with applied stress and the piezo-spectroscopic coefficient is the same as for bulk ruby.

authors

• Nastasi, Michael

published proceedings

• Applied Physics Letters

author list (cited authors)

• Wen, Q., Clarke, D. R., Yu, N., & Nastasi, M.

citation count

• 26

publication date

• January 1995

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering

Digital Object Identifier (DOI)

• 10.1063/1.113522

start page

• 293

end page

• 295

volume

• 66

issue

• 3

URL

• http://dx.doi.org/10.1063/1.113522