Surface Structure Investigation of Epitaxial Nickel Silicides on Si(001) Academic Article uri icon

abstract

  • ABSTRACTLow Energy Ion Scattering (LEIS) techniques have been used to examine epitaxial NiS2 films grown on the (001) surface of Si. The experimental results support a model of a NiSi2(001) surface that is a bulk-like but relaxed (001) Si plane with a 25%-30% concentration of vacancies. The 1/3-, 1/4-, and 1/5-order LEED spots observed for these surfaces may be the result of ordering of the vacancies, such that there are domains in which every 3rd, 4th, or 5th [110]-type atomic rows are missing in the Si terminated (001) plane.

author list (cited authors)

  • Huang, J. H., & Williams, R. S.

publication date

  • January 1, 1986 11:11 AM