Excimer laser mixing of Ti layers on Si3N4 ceramic substrates Academic Article

abstract

• We have used pulsed excimer laser radiation at 248 nm to mix Ti layers into Si3N4 substrates. Mixed layers show formation of small grain TiN in a Si3N4 but no evidence of Ti-Si compounds or free Si. Low fluence (1.0 Jcm2) processing results in minimal mixing as TiN formation at the interface impedes further diffusion. At higher fluence (2 Jcm2) complete and quite uniform mixing occurs. The mixed layer is of the order of 0.5 m thick.

authors

• Nastasi, Michael

published proceedings

• Applied Physics Letters

author list (cited authors)

• Jervis, T. R., Nastasi, M., & Hubbard, K. M.

citation count

• 9

complete list of authors

• Jervis, TR||Nastasi, M||Hubbard, KM

publication date

• February 1992

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1063/1.107436

start page

• 912

end page

• 914

volume

• 60

issue

• 7

URL

• http://dx.doi.org/10.1063/1.107436