Setup for in situ x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films Academic Article uri icon

abstract

  • A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar2+ ions into a zirconia thin film illustrate the potential of the instrument.

published proceedings

  • Review of Scientific Instruments

altmetric score

  • 3

author list (cited authors)

  • Grigull, S., Foltyn, S., Hollander, M. G., Evans, C. R., & Nastasi, M.

citation count

  • 2

complete list of authors

  • Grigull, S||Foltyn, S||Hollander, MG||Evans, CR||Nastasi, M

publication date

  • September 1999