Role of boron for defect evolution in hydrogen-implanted silicon Academic Article uri icon

abstract

  • The mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was more pronounced for nonactivated B. Infrared spectroscopy showed that the concentration of SiH multivacancy defects was also decreased in the B+H coimplanted Si relative to H-only-implanted Si. These decreases in the damage and H-defect density suggest that the lower damage in the B+H coimplanted Si results from a reduction in H-trap density, which in turn enhances H diffusion and the kinetics of blistering. This reduction in lattice damage and HSi-defect complexes is attributed to the formation of a kinetically active BSi interstitial complex that is prevalent in nonactivated B-implanted Si.

published proceedings

  • Applied Physics Letters

altmetric score

  • 3

author list (cited authors)

  • Lee, J. K., Hchbauer, T., Averitt, R. D., & Nastasi, M.

citation count

  • 12

publication date

  • October 2003