Microwave-cut silicon layer transfer Academic Article uri icon

abstract

  • Microwave heating is used to initiate exfoliation of silicon layers in conjunction with the ion-cut process for transfer of silicon layers onto insulator or heterogeneous layered substrates. Samples were processed inside a 2.45 GHz, 1300 W cavity applicator microwave system for time durations as low as 12 s. This is a significant decrease in exfoliation incubation times. Sample temperatures measured by pyrometry were within previous published ranges. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy were used to determine layer thickness and crystallinity. Surface quality was measured by using atomic force microscopy. Hall measurements were used to characterize electrical properties as a function of postcut anneal time and temperature.

published proceedings

  • Applied Physics Letters

author list (cited authors)

  • Thompson, D. C., Alford, T. L., Mayer, J. W., Hochbauer, T., Nastasi, M., Lau, S. S., ... Chu, P. K.

citation count

  • 10

publication date

  • November 2005