Effects of hydrogen implantation temperature on InP surface blistering Academic Article

abstract

• We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation.

authors

• Nastasi, Michael

published proceedings

• Applied Physics Letters

altmetric score

• 3

author list (cited authors)

• Chen, P., Di, Z., Nastasi, M., Bruno, E., Grimaldi, M. G., Theodore, N. D., & Lau, S. S.

citation count

• 15

publication date

• May 2008

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1063/1.2926682

start page

• 202107

volume

• 92

issue

• 20

URL

• http://dx.doi.org/10.1063/1.2926682