Incoherent twin boundary migration induced by ion irradiation in Cu
Academic Article
Overview
Research
Identity
Additional Document Info
Other
View All
Overview
abstract
Grain boundaries can act as sinks for radiation-induced point defects. The sink capability is dependent on the atomic structures and varies with the type of point defects. Using high-resolution transmission electron microscopy, we observed that 3{112} incoherent twin boundary (ITB) in Cu films migrates under Cu3+ ion irradiation. Using atomistic modeling, we found that 3{112} ITB has the preferred sites for adsorbing interstitials and the preferential diffusion channels along the Shockley partial dislocations. Coupling with the high mobility of grain boundary Shockley dislocations within 3{112} ITB, we infer that 3{112} ITB migrates through the collective glide of grain boundary Shockley dislocations, driven by a concurrent reduction in the density of radiation-induced defects, which is demonstrated by the distribution of nearby radiation-induced defects.
