TiC, Ti, and C as a mixing barrier for Ni-Si ion beam mixing Academic Article

abstract

• The effect of thin titanium carbide layer on the ion beam mixing of Ni and Si was studied. No mixing was observed following the ion beam bombardment at 600 keV to the fluence of 81015 Xe++/cm2. Furthermore, it was also found that Ti and C layers alone could prevent an ion beam mixing between Ni and Si, although in the Ti case mixing did occur between Ti and Ni. These results were compared to a thermodynamic model of ion mixing and found to be in qualitative agreement but relative quantitative agreement was poor.

authors

• Nastasi, Michael

published proceedings

• Applied Physics Letters

author list (cited authors)

• Nastasi, M., Hirvonen, J., Caro, M., Rimini, E., & Mayer, J. W.

citation count

• 8

complete list of authors

• Nastasi, M||Hirvonen, J-P||Caro, M||Rimini, E||Mayer, JW

publication date

• January 1987

publisher

• AIP Publishing  Publisher

keywords

• 51 Physical Sciences
• 5106 Nuclear And Plasma Physics
• 5110 Synchrotrons And Accelerators

Digital Object Identifier (DOI)

• 10.1063/1.97653

start page

• 177

end page

• 179

volume

• 50

issue

• 4

URL

• http://dx.doi.org/10.1063/1.97653