Laser Mixing of Titanium on Silicon Carbide Academic Article

abstract

• ABSTRACTWe have used excimer laser surface processing to melt and mix single Ti layers into the surface of polycrystalline SiC substrates. The mixing of Ti into the surface is very rapid and efficient. Examination of Rutherford backscattering (RBS) data for different mixing conditions shows the formation of a preferred composition at the Ti-substrate interface which propagates from the interface with further mixing. Reconstruction of the RBS spectrum indicates that the composition of the layer is Ti45C37Si18. X-ray diffraction demonstrates the formation of Ti suicides and carbides in the surface region. Profiling of C in both mixed and uncoated samples by 6 MeV He+ scattering demonstrates that laser processing of the SiC does not cause major changes in the stoichiometry of the substrate material.

authors

• Nastasi, Michael

published proceedings

• MRS Advances

author list (cited authors)

• Jervis, T. R., Hirvonen, J., Nastasi, M., & Cohen, M. R.

citation count

• 4

publication date

• 1989

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 34 Chemical Sciences
• 3403 Macromolecular And Materials Chemistry
• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/proc-157-395

start page

• 395

volume

• 157

URL

• http://dx.doi.org/10.1557/proc-157-395