Damage Accumulation in MgAl2O4 Crystals by Xe Ion Irradiations Academic Article

abstract

• ABSTRACTWe have studied the damage kinetics in single crystal MgAl2O4 (spinel) with (100) orientation under 370 keV Xe ion irradiations at temperatures of -100 and 400 C. In-situ Rutherford Backscattering Spectrometry (RBS) and ion channeling have been used to monitor the damage accumulation in spinel following sequential Xe ion irradiations. A significant temperature effect on the irradiation damage has been found. Channeling data show that at -100 C, the irradiated spinel layer reaches the same level as in a random spectrum at a dose of 81015 Xe/cm2 (20 DPA for peak damage), while at 400 C, the near surface region (50 nm) remains single-crystalline up to 21016 Xe/cm2.

authors

• Nastasi, Michael

published proceedings

• MRS Advances

author list (cited authors)

• Yu, N., Nastasi, M., Hollander, M. G., Evans, C. R., Maggiore, C. J., Sickafus, K. E., & Tesmer, J. R.

citation count

• 1

publication date

• 1993

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1557/proc-316-69

start page

• 69

volume

• 316

URL

• http://dx.doi.org/10.1557/proc-316-69