Pulsed Beams and Ion-Beam Mixing: Metal-Si and Metalmetal Structures Academic Article

abstract

• ABSTRACTEnergy deposition and heat-flow determine the temperature distributions in pulsed-beam irradiated structures. In laser irradiated Si, transient conductance measurements indicated a liquid/solid interface velocity of 2.8 m/sec during crystallization in agreement with a heat flow model. With pulsed ionbeam annealing of metal-Si structures, melting starts at the interface; epitaxial NiSi2 layers have been formed. Ion-beammixing experiments on polycrystalline and epitaxial Au-Ag bilayers show that intermixing is more pronounced in the polycrystalline structures as is the case with thermal annealing. Superlattice structures are formed in the epitaxial structures.

authors

• Nastasi, Michael

published proceedings

• MRS Advances

author list (cited authors)

• Mayer, J. W., Fastow, R., Galvin, G., Hung, L. S., Nastasi, M., Thompson, M. O., & Zheng, L. R.

citation count

• 0

publication date

• January 1981

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 34 Chemical Sciences
• 3403 Macromolecular And Materials Chemistry
• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/proc-7-125

start page

• 125

volume

• 7

URL

• http://dx.doi.org/10.1557/proc-7-125