The dot size effect of amorphous silicon quantum dot on 1.54-mErluminescence Conference Paper

abstract

• AbstractThe role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 m was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.

authors

• Nastasi, Michael

published proceedings

• MRS Advances

author list (cited authors)

• Park, N., Kim, T., Sung, G. Y., Kim, B., Park, S., Cho, K. S., ... Nastasi, M.

complete list of authors

• Park, Nae-Man||Kim, Tae-Youb||Sung, Gun Yong||Kim, Baek-Hyun||Park, Seong-Ju||Cho, Kwan Sik||Shin, Jung H||Lee, Jung-Kun||Nastasi, Michael

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/proc-817-l1.4

start page

• l1.4

volume

• 817