Band Bending at the Gold (Au)/Boron Carbide-Based Semiconductor Interface Academic Article uri icon

abstract

  • Abstract We have used X-ray photoemission spectroscopy to study the interaction of gold (Au) with novel boron carbide-based semiconductors grown by plasma-enhanced chemical vapor deposition (PECVD). Both n- and p-type films have been investigated and the PECVD boron carbides are compared to those containing aromatic compounds. In the case of the p-type semiconducting PECVD hydrogenated boron carbide samples, the binding energy of the B(1s) core level shows a shift to higher binding energies as the Au is deposited, an indication of band bending and possibly Schottky barrier formation. In the case of the n-type boron carbide semiconductors the interaction at the interface is more typical of an ohmic contact. Addition of the aromatic compounds increases the change in binding energies on both n-type and p-type PECVD boron carbide semiconductors, and the gold appears to diffuse into the PECVD boron carbides alloyed with aromatic moieties.

published proceedings

  • Zeitschrift fr Physikalische Chemie

author list (cited authors)

  • Echeverra, E., Peterson, G., Dong, B., Gilbert, S., Oyelade, A., Nastasi, M., Kelber, J. A., & Dowben, P. A.

citation count

  • 4

complete list of authors

  • Echeverría, Elena||Peterson, George||Dong, Bin||Gilbert, Simeon||Oyelade, Adeola||Nastasi, Michael||Kelber, Jeffry A||Dowben, Peter A

publication date

  • May 2018